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MMBT4401
MMBT4401 NPN
Surface Mount General Purpose Si-Epi-Planar Transistors Si-Epi-Planar Universaltransistoren fur die Oberflachenmontage Power dissipation - Verlustleistung
2.9 0.1 0.4 3 1.30.1 1.1
NPN
250 mW SOT-23 (TO-236) 0.01 g
Version 2006-05-09 Plastic case Kunststoffgehause Weight approx. - Gewicht ca. Plastic material has UL classification 94V-0 Gehausematerial UL94V-0 klassifiziert Standard packaging taped and reeled Standard Lieferform gegurtet auf Rolle
Type Code
1 1.9 2
Dimensions - Mae [mm] 1=B 2=E 3=C
Maximum ratings (TA = 25C) Collector-Emitter-volt. - Kollektor-Emitter-Spannung Collector-Base-voltage - Kollektor-Basis-Spannung Emitter-Base-voltage - Emitter-Basis-Spannung Power dissipation - Verlustleistung Collector current - Kollektorstrom (dc) Junction temperature - Sperrschichttemperatur Storage temperature - Lagerungstemperatur B open E open C open VCEO VCBO VEBO Ptot IC Tj TS
2.5 max
Grenzwerte (TA = 25C) MMBT4401 40 V 60 V 6V 250 mW 1) 600 mA -55...+150C -55...+150C
Characteristics (Tj = 25C) Min. DC current gain - Kollektor-Basis-Stromverhaltnis )
2
Kennwerte (Tj = 25C) Typ. - - - - - - - -
-4
Max. - - - 300 - 500 15 k 30 S 8*10-4
IC IC IC IC IC
= = = = =
0.1 mA, 1 mA, 10 mA, 150 mA, 500 mA,
VCE VCE VCE VCE VCE
= = = = =
1 1 1 1 2
V V V V V
hFE hFE hFE hFE hFE hfe hie hoe hre
20 40 80 100 40 40 1 k 1 S 0.1*10
h-Parameters at/bei VCE = 10 V, IC = 1 mA, f = 1 kHz Small signal current gain - Kleinsignal-Stromverstarkung Input impedance - Eingangs-Impedanz Output admittance - Ausgangs-Leitwert Reverse voltage transfer ratio - Spannungsruckwirkung
-
1 2
Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lotpad) an jedem Anschluss Tested with pulses tp = 300 s, duty cycle 2% - Gemessen mit Impulsen tp = 300 s, Schaltverhaltnis 2% http://www.diotec.com/
(c) Diotec Semiconductor AG
1
MMBT4401 Characteristics (Tj = 25C) Min. Collector-Emitter saturation voltage - Kollektor-Emitter-Sattigungsspg. 2) IC = 150 mA, IB = 15 mA IC = 500 mA, IB = 50 mA IC = 150 mA, IB = 15 mA IC = 500 mA, IB = 50 mA Collector-Base cutoff current - Kollektor-Basis-Reststrom VCE = 35 V, VEB = 0,4 V Emitter-Base cutoff current - Emitter-Basis-Reststrom VCE = 35 V, VEB = 0,4 V Gain-Bandwidth Product - Transitfrequenz IC = 20 mA, VCE = 10 V, f = 100 MHz Collector-Base Capacitance - Kollektor-Basis-Kapazitat VCB = 5 V, IE = ie = 0, f = 1 MHz Emitter-Base Capacitance - Emitter-Basis-Kapazitat VEB = 0.5 V, IC = ic = 0, f = 1 MHz Switching times - Schaltzeiten (between 10% and 90% levels) delay time rise time storage time fall time VCC = 30 V, VEB = 2 V IC = 150 mA, IB1 = 15 mA VCC = 30 V, IC = 150 mA IB1 = IB2 = 15 mA td tr ts tf RthA - - - - - - - - < 420 K/W 1) MMBT4403 MMBT4401 = 2X 15 ns 20 ns 225 ns 30 ns CEBO - - 30 pf CCBO - - 6.5 pF fT 250 MHz - - IEBV - -100 nA ICBV - - 100 nA VCEsat VCEsat VBEsat VBEsat - - 0.75 V - - - - - 0.40 V 0.75 V 0.95 V 1.2 V Kennwerte (Tj = 25C) Typ. Max.
Base-Emitter saturation voltage - Basis-Emitter-Sattigungsspannung 2)
Thermal resistance junction to ambient air Warmewiderstand Sperrschicht - umgebende Luft Recommended complementary PNP transistors Empfohlene komplementare PNP-Transistoren Marking - Stempelung
2 1
Tested with pulses tp = 300 s, duty cycle 2% - Gemessen mit Impulsen tp = 300 s, Schaltverhaltnis 2% Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lotpad) an jedem Anschluss http://www.diotec.com/ (c) Diotec Semiconductor AG
2

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